发明名称 HEATING METHOD AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To uniformly heat a material to be heated to a high temperature in a short time by filling gas in a heating chamber in which the material to be heated is disposed, suitably preheating the material to be heated, and then heating the material to be heated by heat generated by compressing the gas. CONSTITUTION:After gas 30 is filled in a heating chamber 10 in which a material 20 to be heated is disposed, the material 20 to be heated is heated by heat generated by compressing the gas 30. In this case, a piston 12 is quickly moved leftward in Figure to adiabatically compress the gas 30 filled in the chamber 10. Thus, the material 20 to be heated is uniformly heated to a high temperature in a short time. On the other hand, a heater 14 is disposed outside the chamber 10, and the material 20 to be heated may be preheated under the conditions in which thermal reaction does not occur at the material 20 to be heated. Thus, the heating is efficiently performed in a short time without using large power to compress the gas 30, i.e., without using large volumetric compression ratio.
申请公布号 JPH07225079(A) 申请公布日期 1995.08.22
申请号 JP19940036290 申请日期 1994.02.10
申请人 SONY CORP 发明人 SAMEJIMA TOSHIYUKI
分类号 F26B3/00;F27D99/00;H01L21/00;H01L21/20;H01L21/203;H01L21/22;H01L21/265;H01L21/28;H01L21/324;H01L21/331;H01L21/336;(IPC1-7):F26B3/00 主分类号 F26B3/00
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