INSULATION MATERIAL, PRODUCTION THEREOF, SUPRECONDUCTOR THIN FILM AND PRODUCTION THEREOF

摘要

PURPOSE:To obtain an insulation material compensating the characteristics even at a film thickness of about several tens nm and to provide its production process and a process for producing a stable superconductor thin film. CONSTITUTION:A Bi metal disk target and a Bi-Pb-Ti-O baked disk target are used as sputtering targets and a Bi-Sr-Ca-Cu-O superconductor thin film formed on MgO (100) beforehand is used as a substrate. Each target is sputtered in a gaseous mixture of argon and oxygen (4:1) under a pressure of 1.0 Pa by a (Bi-O) (Bi-Pb-Ti-O) (Bi-O) cycle to form a Bi-Pb-Ti-O dielectric thin film on the substrate heated at 650 deg.C.