| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor single crystal substrate, wherein edge crowns are restrained from occurring while protecting an epitaxial layer against auto-doping when a thick epitaxial layer is made to grow through a vapor epitaxial growth method. CONSTITUTION:A semiconductor single crystal substrate 1 is chamfered, wherein a chamfering width L (a space between the outer peripheral end of a substrate 1 and the inner peripheral end of a chamfered part 2) is set so as to enable the occurring positions of edge crowns 5a, 5b, and 5c generated attendant on a vapor epitaxial growth process to be located on a chamfered slope formed by a chamfering process. A space optional in dimensions is provided between the outer peripheral end of an auto-doping preventing protective film 3 formed on the rear side of the substrate 1 and the rear inner peripheral end of the chamfered part 2. When a silicon epitaxial layer 4 is made to grow on the primary surface of the semiconductor silicon single crystal substrate 1 which has a plane orientation of {100} and an off-angle of 0 deg. or so, a chamfering width is set 570mum or above. |
