发明名称 REGRESH ADDRESS TESTING CIRCUIT OF MEMORY CHIP
摘要 A number of adress test paths respectively include a first sub-path with an initial logic level of the refresh address signal and a second sub-path of reflesh address signal. Comparators respectively receive the initial logic level of the signal from the first sub-path and a present logic level of the refresh address signal from the second sub-path. A test output circuit receives output signals generated from the comparators. The circuit verifies self-refresh cycle time.
申请公布号 KR950009390(B1) 申请公布日期 1995.08.21
申请号 KR19920006728 申请日期 1992.04.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, KYONG - U
分类号 G11C11/401;G11C11/406;G11C29/00;G11C29/02;G11C29/08;G11C29/12;(IPC1-7):G11C11/406 主分类号 G11C11/401
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