发明名称 |
REGRESH ADDRESS TESTING CIRCUIT OF MEMORY CHIP |
摘要 |
A number of adress test paths respectively include a first sub-path with an initial logic level of the refresh address signal and a second sub-path of reflesh address signal. Comparators respectively receive the initial logic level of the signal from the first sub-path and a present logic level of the refresh address signal from the second sub-path. A test output circuit receives output signals generated from the comparators. The circuit verifies self-refresh cycle time. |
申请公布号 |
KR950009390(B1) |
申请公布日期 |
1995.08.21 |
申请号 |
KR19920006728 |
申请日期 |
1992.04.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, KYONG - U |
分类号 |
G11C11/401;G11C11/406;G11C29/00;G11C29/02;G11C29/08;G11C29/12;(IPC1-7):G11C11/406 |
主分类号 |
G11C11/401 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|