| 摘要 |
<p>PURPOSE: To use minimum dimensions also in the peripheral regions of memory matrix and increase the integration density of a memory further by a method wherein selection transistors are composed of thin film field effect transistors having semiconductor layers which are formed on an insulating layer covering a semiconductor main part. CONSTITUTION: Selection transistors 19 are controlled by input signals supplied through terminals 20 and 21. 1st and 2nd column conductors are controlled by the signals through the terminal 20. 3rd and 4th column conductors are controlled by the signals through the terminal 21. The transistors 19 of the 1st and 2nd column conductors are connected to a selection transistor 22 controlled by the input signal of a terminal 23. The transistors 19 related to two lower column conductors 4 are connected to a selection transistor 24 controlled by the input signal of a terminal 25. As the selection transistors 19 and the transistors 22 and 24 are composed of thin film transistors, a very fine pitch memory can be constituted.</p> |
