| 摘要 |
PURPOSE:To obtain a light emitting element which has a long service life and can prevent crosstalk by forming a wire-like porous silicon body as a light emitting body on a substrate. CONSTITUTION:An intrinsic gettering layer 2 is formed in a p-type silicon substrate 41 and lower electrodes 3 doped with an n-type impurity in a stripe-like state are formed in the surface of the substrate 41. A transparent insulator layer 4 is formed on the substrate 41 and wire-like porous silicon bodies 1 are buried in the layer 4. In addition, upper electrodes 6 are formed on the upper surface of the layer 4 in a stripe-like state so that the electrodes 6 can intersect the electrodes 3. The silicon bodies 1 are connected to the upper electrodes 6 on top and to the lower electrodes 3 on the bottom. Therefore, the deterioration of the wire-like porous silicon bodies formed as light emitting bodies can be prevented, because the diffusion of the metal constituting the electrodes 6 to the wire-like porous silicon bodies can be remarkably reduced. |
