| 摘要 |
PURPOSE:To make it possible to form an amorphous alloy semiconductor with small defect density and good film characteristics, by applying energy to the surface of a thin-film layer after the thin-film layer that can not be processed under optimal conditions is formed. CONSTITUTION:Hydrogen or halogen is used as a termination element for terminating a defect like non-pair electrons. An energy applying process is carried out, in which energy is applied to a thin-film layer that tends to combine with the termination element. As for an a-SiGe film, the energy is applied to an a-Si layer. In the energy applying process, a light beam with energy that is almost all absorbed in the vicinity of the surface is cast. In another case, a neutral particle or ion generated from hydrogen or inert-gas plasma is cast in the energy applying process. |
