| 摘要 |
PURPOSE:To suppress the formation of a silicon oxide film on the surface of an underneath layer forming a thin film layer for the formation of the thin film layer having exlellent quality characteristics. CONSTITUTION:Within the title method of manufacturing semiconductor device to form a thin film layer 7 on an aperture part 8 for contact of the thin film layer 7 to be coated on the surface of a silicon substrate 2, after making this aperture part 8, the silicon substrate 2 is drycoating processed with halogen atoms so as to coat the surface of the aperture part 8 with the halogen stoms. Otherwise, during the dielectric film forming step, the dry-coating process with halogen atoms can be performed on the lower electrode surface. |
