发明名称 SEMICONDUCTOR DEVICE LEAD FRAME
摘要 PURPOSE:To make it possible to miniaturize a sealed package, to increase the number of pins, to reduce cost, and to secure high reliability with the wiring- to-wiring interval reduced in a relay wiring layer by forming an inorganic electric insulating film and further an aluminum relay wiring layer on a substrate made of an iron alloy to constitute a relay wiring substrate. CONSTITUTION:This lead frame comprises a relay wiring substrate 8 provided with an inorganic electric insulating film 10 and an aluminum relay wiring layer 11 on a substrate 9 made of an iron alloy containing a 40-50-wt.% of nickel. The inner end of each relay wiring layer 11 is located individually corresponding to an electrode of a semiconductor element 1 arranged at the center of the relay wiring substrate 8. The relay wiring layer 11 is hard to undergo restrictions of pitch narrowing and can make the inner end close enough to the semiconductor element 1 even by an increase in the number of pins. This makes it possible to reduce cost without an increase in size of the element or the lead.
申请公布号 JPH07221253(A) 申请公布日期 1995.08.18
申请号 JP19940008672 申请日期 1994.01.28
申请人 SUMITOMO ELECTRIC IND LTD 发明人 TOMIKAWA TADASHI;YASUHARA MASAHARU;HASHIMOTO SHOGO
分类号 H01L21/60;H01L23/50 主分类号 H01L21/60
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