| 摘要 |
PURPOSE:To reduce a consuming current and drive at high velocity in a semiconductor memory device using a ferroelectric film for a capacitor accumulating electric charges. CONSTITUTION:A group of memory cells connected to one word line WL1 or WL2 is divided optionally. Divided memory cells 51, 53 or 52, 54 share one division cell plate line DCP1 or DCP2. The division cell plate line is connected to a cell plate line CP via a selection transistor T1 or T2, and a gate of the selection transistor T1 or T2 is controlled by the word line WL1 or WL2. Accordingly, since only a necessary cell plate for a read/write operation is selectively driven, a load capacity is reduced, a consuming current is decreased and a high-speed operation is realized. |
