发明名称 FORMATION OF GROOVE IN SEMICONDUCTOR LIGHT EMITTING ELEMENT STRUCTURE
摘要 PURPOSE:To form a group having a fixed shape with high reproducibility by preventing large side etching by successively forming a specific lower layer, a core layer, and a upper layer by epitaxial growth and forming an etching window through a protective layer formed on the upper layer, and then, selectively etching the upper layer and specific surfaces of the core layer. CONSTITUTION:A core layer 2 composed of MP (where, M represents one kind or two or more kinds selected from among group III-b elements) and upper layer 3 composed of MAs are successively formed by epitaxial growth on the (100) face of a lower layer 1 composed of MAs. Then a protective layer 4 is provided on the upper layer 3 and, for example, a stripe is lithographically formed. After forming the stripe, a stripe-like window is formed by dry etching part of the layer 4. Thereafter, the upper layer 3 and the face of the core layer 2 other than (111) face are selectively etched. Since the upper layer 3 composed of MAs is formed on the surface of the core layer 2 composed MP, the scale of side etching is limited.
申请公布号 JPH07221345(A) 申请公布日期 1995.08.18
申请号 JP19940027370 申请日期 1994.01.31
申请人 MITSUBISHI CHEM CORP 发明人 HORIE HIDEYOSHI;FUJIMORI TOSHINARI;NAGAO SATORU;HOSOI NOBUYUKI;GOTO HIDEKI
分类号 H01L33/14;H01L33/16;H01L33/20;H01L33/30;H01S5/00 主分类号 H01L33/14
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