发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To improve the electrical characteristics of a semiconductor device at a high frequency and to realize a reduction in the cost of the device. CONSTITUTION:A lead 111 made of a copper foil is bonded on a tape member 13 using an adhesive material 12. An electrode on an IC chip 15 is connected with an inner lead part 111a of the lead 111 via a bump 14. An outer lead 111b is made to project outside of an IC package after a resin-sealing. Protrusions 18 are formed on the upper surface of the lead 11, for power supply or grounding. An anisotropic conductive resin film (ACF) 16 is bonded on the upper surface of the lead 111. The ACF 16 is compressed on the parts of the protrusions 18 and the protrusions 18 and a metal plate 171 to oppose to the protrusions 18 are electrically connected with each other.
申请公布号 JPH07221136(A) 申请公布日期 1995.08.18
申请号 JP19940013723 申请日期 1994.02.07
申请人 FUJITSU LTD;KYUSHU FUJITSU ELECTRON:KK 发明人 YAMASHITA TATSURO;TAKENAKA MASAJI
分类号 H01L21/60;H01L23/12;H01L23/50;(IPC1-7):H01L21/60 主分类号 H01L21/60
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