| 摘要 |
depositing an insulation film, a metal film and an antireflection film in turn; depositing a first oxide film on the antireflection film, and coating a photoresist thereon; etching the first oxide film using the photoresist pattern after patterning the photoresist by photo-etching process; depositing a second oxide film on the first oxide film pattern, and forming a side wall of the oxide film in sides of the first oxide film by etch back process; and etching the oxide film at a low etching rate and etching the antireflection film and metal film at a high etching rate using the first oxide film and the side walls of the oxide film as a mask so as to form the metal wire. The method improves a profile of the metal wiring.
|
