METAL CONTACT FORMING METHOD

摘要

forming p-well region(1) on a semiconductor substrate; forming a field oxide film(3) on the p-well region(1); forming a gate oxide film(4) on the substrate; forming wordlines(5) by etching the defined portion after depositing a polysilicon on whole surface and forming a photoresist layer on it; forming an active region(2) of N+ type by ion-implanting the defined portion of the p-well region(1) to use the wordlines(5) as a mask; depositing a first interpolyoxide film(7) on the wordlines(5); forming a bitline contact region by etching the defined portion of the first interpolyoxide film(7); forming a bitline polysilicon(11) by filling the bitline contact region with silicon; forming a bitline polycide(13) on the bitline polysilicon(11); forming a second interpolyoxide film(9) on the bitline polycide(13); forming a metal contact region by etching the defined portion of the second interpolyoxide film(9); and forming a metal layer on the contact region to contact the bitline polycide(13) by depositing process.