SINGLE CRYSTALLINE SI SUBSTRATE AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a method for manufacturing a single crystalline Si substrate which has a flat Si surface at an atomic level without deterioration of flatness during processing and adapted for an Si quantum effect device and in which the surface can be flattened without depending upon an orientation of the substrate and with low cost without using an ultra-high vacuum unit. CONSTITUTION:The single crystalline Si substrate comprises a laminate having a single crystalline Si thin film and at least one Si oxide film in contact with the Si surface of the laminate in such a manner that a boundary of the single crystalline Si and the Si oxide film has a flat terrace of an atomic layer order and a step structure of an atomic layer order height. A method for manufacturing the substrate comprises at least the step of treating the laminate having the substrate or the thin film, and the structure having at least the one Si oxide film in contact with the Si surface of the laminate under conditions of satisfying oxygen concentration, temperature capable of melting only a desired Si/Si oxide film boundary of the structure.