| 摘要 |
PURPOSE: To provide an improved fine resist pattern forming method capable of solving the problem of a deviation in line widths and the problem of projection to a front surface by making combination use of a silylating stage and an alkaline surface treating stage. CONSTITUTION: This method includes a step of applying a resist film 62 on a silicon substrate 61, a step of forming a primary hardly soluble layer 63 by subjecting the applied resist film 62 to the surface treatment with an alkaline soln., a step of exposing the resist film 62 and forming latent image patterns 64 in the exposed parts by using a mask for exposure, a step of forming the difference in level from the surface of the non-exposed resist film by selectively etching the exposed resist film by as much as the depth of the primary hardly soluble layer 63, a step of forming the silylated layer 67 on the surface of the exposed resist film subjected to the etching by executing the silylating stage, a step of removing the non-exposed resist film by an O2 RIE method using the silyated layer 67 as a mask and a step of forming resist patterns 62' by removing the silylated layer 67. |
