POWER SEMICONDUCTOR MODULE AND INVERTER DEVICE USING IT

摘要

PURPOSE:To provide a power semiconductor module in which a stress applied to a soldered part at an internal terminal is reduced, in which a noise voltage to a gate is induced little and in which a wiring impedance between adjacent power semiconductor modules is reduced and to provide an inverter device using it. CONSTITUTION:A collector internal terminal 7 and an emitter internal terminal 12 for an IGBT chip are formed in such a way that they are erected in parallel with inner faces of side-plate parts 6A, 6B for an insulating container 6 and in a state that they are brought close enough to the inner faces. A gate internal terminal 18 is made nearly in the central part of the insulating container 6 so as to be separated from the collector internal terminal 7 and the emitter internal terminal 12.