| 摘要 |
PURPOSE: To provide a bonding method of a compound semiconductor wafer capable of minimizing transition and point defect on a bonded ohmic interface between the surfaces of two semiconductors and bonding a compound semiconductor wafer which produces ohmic conduction having low electric resistance. CONSTITUTION: An In0 .Ga0.7 P layer uses Te as an n-dopant and grows based on an organic metal CVD with a lattice shifted on a GaP: S board and adds a single axial pressure thereto as a compound semiconductor in a graphite-made anvil fixture, and heats so that the orientation on the semiconductor surface may be aligned with the position of the rotary direction, thereby bonding the n-In0 .Ga0.7 P with the n-GaP: board so that a current-voltage characteristic curve 21 on the bonded surface of two semiconductors may present linearity, thereby achieving low ohmic conduction. |
