| 摘要 |
<p>PURPOSE:To provide a high-quantum-efficiency polarized electron beam generating element. CONSTITUTION:The dosage of Zn in relation to the second semiconductor 16 serving as a semiconductor photoelectric layer is lessened continuously as it goes to the surface 22 from inside, in an inner area 18. And, the concentration of carriers near the interface with the innermost first semiconductor 14 is made about 1X10<19>(cm<-3>), and the concentration of carriers near the interface with the surface layer area 20 is made about 5X10<17>(cm<-3>), and also in the surface layer area 20, the concentration of carriers is made about 5X10<18>(cm<-3>) by relatively increasing the dosage of Zn. Hereby, in the inner area 18, the energy level of a conductive band becomes lower, as it comes closer to the surface 22, and the excited electrons are easy to shift, and besides the surface 22 becomes easy to materialize NEA condition.</p> |
