发明名称 ELECTRODE OF N-TYPE GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LAYER AND FORMATION THEREOF
摘要 PURPOSE:To obtain an electrode which has a large contact strength and from which a ball hardly separates by laminating in order from the n-type layer side a first multilayer thin film which is formed by laminating Ti-Al alloys or depositing Ti and Al and a second thin film which is constituted of a metal which has a higher melting point than Al. CONSTITUTION:An electrode formed on the surface of an n-type layer 2 is formed by laminating in order from the n-type layer 2 side a first multilayer thin film which is formed by laminating Ti-Al alloys or depositing Ti and Al and a second thin film which is constituted of a metal which has a higher melting point than Al. The metals which have a higher melting point than Al and which can be used for the second thin film include Au, Ti, Ni, Pt, W, Mo, Cr and Cu. Among them, Au, Ti, and Ni are preferable. Due to this structure, the electrode can have a good ohmic contact with the n-type layer and the electrode and a ball hardly separate from each other and therefore the electrode becomes such a one that has a large contact strength.
申请公布号 JPH07221103(A) 申请公布日期 1995.08.18
申请号 JP19940008727 申请日期 1994.01.28
申请人 NICHIA CHEM IND LTD 发明人 YAMADA TAKAO;SENOO MASAYUKI;BANDO KANJI;NAKAMURA SHUJI
分类号 H01L21/60;H01L29/45;H01L33/32;H01L33/40;H01L33/62;H01S5/00;H01S5/042;H01S5/323 主分类号 H01L21/60
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