发明名称 |
AMORPHOUS SILICON-GERMANIUM FILM AND PHOTOVOLTAIC DEVICE USING IT |
摘要 |
PURPOSE:To provide an amorphous silicon germanium film having a low defect density and excellent photoconductivity. CONSTITUTION:The [H(Si)]/[Si] quantity and [H(Ge)]/[Ge] quantity of an amorphous silicon-germanium film against the combined hydrogen in the film are set at specific values by setting the [SiH2]/[Si] quantity, [SiH]/[Si]quantity, and [SiH2]/[SiH] ratio in the film at specific values against the quantity of combined hydrogen per unit Si atoms in the film. |
申请公布号 |
JPH07221337(A) |
申请公布日期 |
1995.08.18 |
申请号 |
JP19940280674 |
申请日期 |
1994.11.15 |
申请人 |
SANYO ELECTRIC CO LTD |
发明人 |
SANO KEIICHI;AYA YOICHIRO |
分类号 |
C01B33/06;C23C16/42;H01L21/314;H01L31/04 |
主分类号 |
C01B33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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