发明名称 AMORPHOUS SILICON-GERMANIUM FILM AND PHOTOVOLTAIC DEVICE USING IT
摘要 PURPOSE:To provide an amorphous silicon germanium film having a low defect density and excellent photoconductivity. CONSTITUTION:The [H(Si)]/[Si] quantity and [H(Ge)]/[Ge] quantity of an amorphous silicon-germanium film against the combined hydrogen in the film are set at specific values by setting the [SiH2]/[Si] quantity, [SiH]/[Si]quantity, and [SiH2]/[SiH] ratio in the film at specific values against the quantity of combined hydrogen per unit Si atoms in the film.
申请公布号 JPH07221337(A) 申请公布日期 1995.08.18
申请号 JP19940280674 申请日期 1994.11.15
申请人 SANYO ELECTRIC CO LTD 发明人 SANO KEIICHI;AYA YOICHIRO
分类号 C01B33/06;C23C16/42;H01L21/314;H01L31/04 主分类号 C01B33/06
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