发明名称 |
A REFERENCE CIRCUIT HAVING A CONTROLLED TEMPERATURE DEPENDENCE |
摘要 |
Mobility in a FET is used as a time standard to develop a resistance (or a transconductance or a current) reference which may be fully integrated and which is temperature stable to an arbitrary desired accuracy (or which varies with temperature in a desired fashion). The large temperature dependence of mobility is compensated (or adjusted to a desired variation characteristic) by applying a gate bias voltage having a predetermined variation in value with respect to temperature. In one embodiment the bias voltage of the FET is given a temperature dependence which results in the drain current of the FET being substantially constant with respect to temperature. This current is then used to charge or discharge a capacitor, yielding a precise R-C product which may be implemented fully in integrated form.
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申请公布号 |
WO9522093(A1) |
申请公布日期 |
1995.08.17 |
申请号 |
WO1995IB00098 |
申请日期 |
1995.02.14 |
申请人 |
PHILIPS ELECTRONICS N.V.;PHILIPS NORDEN AB |
发明人 |
BLAUSCHILD, ROBERT |
分类号 |
G05F3/24;(IPC1-7):G05F3/24;G05F1/46 |
主分类号 |
G05F3/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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