发明名称 Solar cell with doped polycrystalline semiconductor layer
摘要 Solar cell comprises a transparent substrate on which a conductive layer of e.g. In-Sn oxide is formed, followed by a semiconductor layer of polycrystalline Si with perpendicular grain boundaries and p or n doping. Contacts on this layer are located at boundary positions with an insulator layer, implanted with positive or negative charges.
申请公布号 DE4404387(A1) 申请公布日期 1995.08.17
申请号 DE19944404387 申请日期 1994.02.11
申请人 WAGNER, SIEGFRIED, PROF. DR.-ING. HABIL., 09126 CHEMNITZ, DE;OTTO, THOMAS, DR.-ING., 09126 CHEMNITZ, DE;PROESCH, GEORG, DIPL.-ING., 09111 CHEMNITZ, DE;BIERAU, FRANK, DIPL.-ING., 07745 JENA, DE 发明人 WAGNER, SIEGFRIED, PROF. DR.-ING. HABIL., 09126 CHEMNITZ, DE;OTTO, THOMAS, DR.-ING., 09126 CHEMNITZ, DE;PROESCH, GEORG, DIPL.-ING., 09111 CHEMNITZ, DE;BIERAU, FRANK, DIPL.-ING., 07745 JENA, DE
分类号 H01L31/06;H01L31/062;(IPC1-7):H01L31/06 主分类号 H01L31/06
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