| 摘要 |
A generally T-shaped gate (34) is formed by electron beam irradiation of a multilevel resist structure (20) on a substrate (12). The resist structure (20) has an upper layer (24) which is more sensitive to the electron beam than a lower layer (22) thereof. A generally T-shaped opening (30) is formed in the resist structure (20) by etching of the irradiated areas. An electrically conductive metal is deposited to fill the opening and thereby form a T-shaped gate (34) on the substrate (12). After the resist layer structure (20) and metal deposited thereon is removed, a masking layer (40) is formed on the substrate (12) around the gate (34), having an opening therethrough which is aligned with and wider than the cross section of the gate (34), and defining first and second lateral spacings (52, 54) between opposite extremities of the cross section and adjacent edges of the opening. Deposition of an electrically conductive metal forms source and drain metallizations (48,50) on the substrate (12) on areas underlying the first and lateral spacings (52, 54) respectively. The metallizations (48, 50) are self-aligned to the gate (34) and separated therefrom by the masking effect of the gate (34) during the metal deposition. The gate (34') may have an asymmetrical top section (34b') which provides a larger spacing between the gate (34') and source metallization (48) to increase the breakdown voltage of the device. Insulative oxide sidewalls (38) may be formed on the gate. <IMAGE> |
