发明名称
摘要 A semiconductor device comprises a substrate (12), a semiconductor element (11) mounted on the substrate (12), a cap (13, 51, 62) having an opening (13c, 51a, 62a) smaller than the external size of the semiconductor element (11) for covering the semiconductor element (11) to provide a hermetic seal, and heatsink member (14, 63) mounted on the cap (13c, 51, 62) to cover the opening (13, 51a, 62a) and to make contact with the semiconductor element (11) via the opening (13c, 51a, 62a), so that heat generated by the semiconductor element (11) is conducted directly to the heatsink member (14, 63). A method of producing the semiconductor device comprises the steps of mounting the semiconductor element (11) on the substrate (12), covering the semiconductor element (11) by the cap (13, 51, 62) which is fixed to the substrate (12), and mounting the heatsink member (14, 63) on the cap (13, 51, 62) to cover the opening (13c, 51a, 62a) and to make contact with the semiconductor element (11) via the opening (13c, 51a, 62a).
申请公布号 JPH0777247(B2) 申请公布日期 1995.08.16
申请号 JP19860218301 申请日期 1986.09.17
申请人 发明人
分类号 H01L23/04;H01L23/02;H01L23/055;H01L23/34;H01L23/367;(IPC1-7):H01L23/34 主分类号 H01L23/04
代理机构 代理人
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