发明名称 Hall-effect sensor.
摘要 <p>A Hall-effect sensor (300) having a distributed array of current sources (306) connected to an active region (304) formed in a substrate (302) of an integrated circuit. A corresponding array of current sinks (308) is connected to the active region (304) of the substrate opposite the current sources (306). When current flows in a path parallel to a first dimension of the active region (304) from the current sources (306) to the current sinks (308), a measurable Hall voltage develops across the active region (304) if a magnetic field (B) is passed through the sensor. This Hall voltage is measured by two terminals (310, 312) connected across a second dimension of the active region (304) of the substrate. The measured Hall voltage sensitivity is very high according to this configuration. &lt;IMAGE&gt;</p>
申请公布号 EP0667648(A2) 申请公布日期 1995.08.16
申请号 EP19950300389 申请日期 1995.01.23
申请人 HEWLETT-PACKARD COMPANY 发明人 DILLMAN, NORMAN GREGG
分类号 H01L43/06;G01R33/07;(IPC1-7):H01L43/06 主分类号 H01L43/06
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