发明名称 Plasma source arrangement for ion implantation.
摘要 <p>An object (14) which is to be implanted with ions is enclosed in a container (12). A plasma (44) is generated in a chamber (26) which is separate from, and opens into the container (12). The plasma diffuses from the chamber (26) into the container (12) to surround the object (14) with uniform density. High voltage negative pulses are applied to the object (14), causing the ions to be accelerated from the plasma (44) toward, and be implanted into, the object (14). Line-of-sight communication between a plasma generation source (30) located in the chamber (26) and the object (14) is blocked, thereby eliminating undesirable effects including heating of the object (14) by the source (30) and transfer of thermally discharged material from the source (30) to the object (14). Two or more chambers (26,34) may be provided for generating independent plasmas (44,46) of different ion species which diffuse into and uniformly mix in the container (12). The attributes of the different plasmas (44,46) may be individually selected and controlled in the respective chambers (26,34). <IMAGE></p>
申请公布号 EP0480688(B1) 申请公布日期 1995.08.16
申请号 EP19910309240 申请日期 1991.10.09
申请人 HUGHES AIRCRAFT COMPANY 发明人 MATOSSIAN, JESSE N.;GOEBEL, DAN M.
分类号 C23C14/48;H01J37/08;H01J37/317;H01J37/32;H01L21/265;(IPC1-7):H01J37/32;C30B31/22 主分类号 C23C14/48
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