| 发明名称 |
Process of making a semiconductor epitaxial substrate |
| 摘要 |
A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an InyGa(1-y)As (0<y</=1) crystal layer as a channel layer, the composition and the thickness of the InyGa(1-y)As layer being in the ranges within the elastic deformation limit of crystals constituting the InyGa(1-y)As layer and the vicinity of the InyGa(1-y)As layer, the semiconductor epitaxial substrate further comprising a semiconductor layer between the channel layer and an electron donating layer for supplying electrons to the channel layer, the semiconductor layer having a thickness of from 0.5 to 5 nm and a bandgap width within the range of from the bandgap width of GaAs to the bandgap width of the electron donating layer. |
| 申请公布号 |
US5441913(A) |
申请公布日期 |
1995.08.15 |
| 申请号 |
US19940266680 |
申请日期 |
1994.06.28 |
| 申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
HATA, MASAHIKO;FUKUHARA, NOBORU;TAKATA, HIROAKI;INUI, KATSUMI |
| 分类号 |
H01L21/203;H01L21/205;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/203 |
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