Method and apparatus for measuring high-frequency C-V characteristics of MIS device

摘要

A method of measuring the high-frequency C-V characteristics of a MIS (e.g. MOS) device is disclosed. The method comprises the steps of providing the MIS device in a shielding-box shielding the device from an outside electromagnetic light, illuminating the device with a light of a wavelength preventing an induction of excess carriers at the surface of the semiconductor, applying a voltage of a high frequency to a gate electrode of the device, and alternating a sweep direction of the voltage. An apparatus implementing the method is also disclosed. The method and the apparatus accurately measure the MOS capacitance in response to a voltage applied to the gate electrode.