| 摘要 |
A semiconductor laser includes a semiconductor substrate of a first conductivity type, a gain guiding structure comprising of a first conductivity type, a lower cladding layer disposed on the substrate, an active layer disposed on the lower cladding layer and having a light emitting region, and an upper cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the active layer, and a multiquantum barrier layer interposed between the upper cladding layer and the active layer excluding the light emitting region. In this structure, the multiquantum barrier layer reduces leakage current flowing outside of the light emitting region of the active layer and increases effective current flowing into the light emitting region, whereby the light output of the laser is significantly increased.
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