发明名称 External cavity control semiconductor laser
摘要 One end of semiconductor laser 1 is coated an antireflection film 1A. And, the external resonator is constructed with a diffraction grating 2 and an external reflective mirror 4. Additionally, a beam splitter 3 is provided between the diffraction grating 2 and the external reflective mirror 4. An output light from antireflection film 1A of semiconductor laser 1 is transformed to a parallel light by the convex lens 5A, and is supplied to the beam splitter 3. The parallel light 13A changes a light path thereof at beam splitter 3, and is then supplied to the external resonator. A wavelength of the parallel light 13A is determined by the diffraction grating 2, so that the light has a selected wavelength, and a phase which is matched with a phase condition of the external resonator. A portion of the resonated light is reflected by the beam splitter 3, and is fed back to the semiconductor laser 1 via convex lens 5A, as a reflected light. When the light is fed back, the semiconductor laser 1 outputs a light of narrow spectral line width. This light is outputted from another end, which is not coated with antireflection film 1A, of semiconductor laser 1, and is transformed to a parallel light by the convex lens 5B. This parallel light 13B forwards to a light isolator 6, is then collected at optical fiber 8 by the convex lens 7. The light which supplied at optical fiber 8 is output to an external apparatus.
申请公布号 US5442651(A) 申请公布日期 1995.08.15
申请号 US19930125161 申请日期 1993.09.23
申请人 ANDO ELECTRIC CO., LTD. 发明人 MAEDA, MINORU
分类号 H01S5/00;H01S3/082;H01S5/14;(IPC1-7):H01S3/082 主分类号 H01S5/00
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