| 摘要 |
PURPOSE:To provide a high sintering density at a low baking temperature of 1000 deg.C or less even when content of boron is set low for improving dielectric characteristics in manufacturing a dielectric comprising composite oxide containing boron. CONSTITUTION:In a manufacturing method of a dielectric comprising baking oxides of boron and other elements, or oxide precursors of these for forming composite oxide of boron and the other elements, the oxides or precursors of the other elements than boron are temporarily baked to provide composite oxide of the other elements than boron. This composite oxide is mixed with the oxide or precursor of boron, and it is then primarily baked to provide composite oxide of boron and the other elements. A mixing ratio of boron is desirably 2-10% at mole ratio of baron in the dielectric. |
