| 摘要 |
PURPOSE:To provide a semiconductor light emitting element array which can be improved in luminance and density by making the micro fabrication of its upper surface easier. CONSTITUTION:A reflecting layer 3, n-type clad layer 4, active layer 5, and p-type clad layer 6 are successively formed on a substrate 2 and a plurality of light emitting sections 7 arranged in a row are formed of etched grooves 8 having a narrower depth than the opening. Layers 9 are grown in the grooves 8 and a passivation film 11 is formed on the layers 9. Electrodes 10 are provided above the light emitting sections 7 and another electrode 13 is provided on the lower surface of the substrate 2. In addition, wiring electrodes 12 connected to the sections 7 are formed on the passivation film 11. |
