| 摘要 |
PURPOSE:To increase the level of integration of an SRAM, by constituting a node by electrically connecting the gate electrode of an MISFET for driving with the source region or the drain region of an MISFET for transferring, and connecting the gate electrode or the drain electrode of an MISFET for load with the node. CONSTITUTION:The gate electrode 14 of an MISFET Qp1 for load is connected with a semiconductor region 11 as the drain region of an MISFET Qd2 for driving, via a gate electrode 7. Similarly the gate electrode 14 of an MISFET Qp2 for load is formed so as to cover the upper part of the gate electrode 7 of the MISFET Qd2 for driving. The sate electrode 14 of the MISFET Qp2 for load is connected with the semiconductor region 11 as the drain region of the MISFET Qd1 for driving which region is constituted in an unified body with the one side semiconductor region 11 of an MISFET Qt2 for transferring. Thereby the level of integration is improved, the power consumption is reduced, the load element of a memory cell is optimized, and the soft error is prevented. |
