| 摘要 |
<p>PURPOSE:To provide the high-illuminance, high-gradation, and highcontrast display device which can provide a pixel electrode with additional capacity without impairing the aperture rate of the display device by connecting the pixel electrode and a pixel transistor electrode to each other through an opening formed in a semiconductor layer and forming the capacitance by utilizing the side wall of the opening. CONSTITUTION:A pixel driving transistor(TR) is composed of a drain 103, a source 104, a low-density electric field relaxing layer 105 for dielectric strength improvement, and a gate 106. The drain 103 comes into contact with p<+> polysilicone 108 embedded in an oxide film 1 7 formed in a trench groove and is connected to a pixel electrode 109. The source 104 is connected to a signal line 110. The silicon layer 101 is given a potential through a wire 111. There is a passivation film 112 as an upper layer of the TR and adhered to a transparent substrate 114 with an adhesive 113. A passivation film 115 is formed below the pixel electrode 109 and a liquid crystal layer 116 is sandwiched between it and an opposite substrate.</p> |
