| 摘要 |
<p>PURPOSE: To provide a manufacturing method of an offset polysilicon thin-film transistor which can adjust the width of an offset region. CONSTITUTION: An active layer 1 constituted of polysilicon is formed on a substrate 100 and a polysilicon gate 5 is formed on a gate insulation layer 3 formed by oxidizing the upper part of the active layer 1. A metal layer constituted of metal for forming a silicide is formed in the periphery of the polysilicon gate 5 and, with this metal layer used as a mask, n<+> ions of high concentration are implanted. The silicide 10 is formed of the polysilicon gate 5 and the metal layer by heat treatment subsequently and, after the residual metal layer is removed, n<-> ions of low concentration are implanted. Thereby offset regions 13 and 14 having a width corresponding to the thickness of the remaining metal layer are formed of a source region 12 and a drain region 15 on the channel side. By this method, the width of the offset regions 13 and 14 can be controlled to be 1μm or less.</p> |
