SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE: To provide a semiconductor device, together with its manufacturing method, comprising a new gate electrode structure. CONSTITUTION: A gate electrode comprises a metal layer 206 which is enclosed with such diffusion-preventing material layer 205 as titanium nitride(TiN). Since diffusion or precipitation of metal on an underlying layer is prevented by the diffusion-preventing material layer 205, a copper of low resistance can be used as the metal layer 206. By consisting a gate electrode with the metal layer 206 of heat-resistant metal which, being of low resistance, is enclosed with the diffusion-preventing material layer 205, a time delay due to high resistance of a gate electrode is shortened, and power consumption is reduced.