NON-VOLATILE SEMICONDUCTOR MEMORY

摘要

PURPOSE:To obtain non-volatile semiconductor memory which can easily detect a memory cell having a bad programming or erasing characteristic and easily evaluate a programming and an erasing characteristic. CONSTITUTION:A register 24 stores the maximum number of times of retries when the programming or erasing is completed. The number of times of retries stored in the register 24 can be read in the test mode. Therefore, this register 24 can store the number of times of retries which is determined by a memory cell having the worst characteristic. Moreover, the memory cell having defective characteristic can be rejected at the time of initial testing by reading such stored number of times of retries and deterioration of characteristic of the memory cell by repeating the programming and erasing can be evaluated easily.