TOP GATE TYPE THIN FILM TRANSISTOR ARRAY

摘要

PURPOSE:To obtain specific hold capacity and specific area of a charge collector part without increasing the number of processes. CONSTITUTION:An electrode 8a dedicated to the holding capacity and a dedicated bus 8b are formed on a substrate l by using the same material in the same process with a source bus 2. A drain electrode 3a is formed in an island shape and a contact hole 14 is formed in a gate insulating film 5 on it. A charge collector electrode (electrode 9a which acquires light energy irradiating the TFT array and accumulates it as electric charges in the holding capacity part formed with the holding capacity dedicated electrode) connected to the drain electrode 3a through the contact hole 14 is formed on the gate insulating film 5 by using the same material in the same process with the gate electrode 6a so that the holding capacity dedicated electrode 8a is covered.