| 摘要 |
PURPOSE:To obtain an InGaAs type semiconductor light emitting element having a high characteristic temperature and high light emitting efficiency by forming its active layer of InGaAs or InGaAsP and clad layers of ZnSSe of ZnCdSSe. CONSTITUTION:A semiconductor light emitting element is provided with clad layers 3 and 5 on both sides of an active layer 4. The active layer 4 is formed of InGaAs or InGaAsP and the clad layers 3 and 5 are formed of ZnSSe or ZnCdSSe. Or, after successively depositing the clad layers 3 and 5 composed of ZnSSe on a substrate 1 composed of GaAs, the active layer 4 having a different lattice constant front that of the layers 3 and 5 and composed of Inlays is deposited on the layers 3 and 5. Therefore, the difference in refractive index between the active layer 4 and clad layers 3 and 5 can be increased and large conductive zone offset energy can be realized while an appropriate lattice constant difference is maintained between the active layer 4 and clad layers 3 and 5. |
