SEMICONDUCTOR MEMORY DEVICE AND DATA PROCESSOR

摘要

PURPOSE:To write satisfactorily even if a power supply voltage is low. CONSTITUTION:In order to have the selection level of a word line WL at the time of writing data into a static type memory cell MS higher than that at the time of reading data from memory cell MS, a word line selection level switching circuit 516 is provided. By setting the level of the word line at the time of the data writing at a high voltage Vch level which is higher than a power supply voltage Vcc by approximately 1V, the writing into the nodes 56 and 57 of the memory cell MS with the full amplitude of the power supply voltage can be realized and a high level side margin under a low voltage can be maintained.