| 摘要 |
PURPOSE:To make the lattice constants of semiconductors of both layers equal to each other by forming a light absorbing layer of CdTe and window layer of a CdTe-MgTe solid solution when the chalcogen element is Te. CONSTITUTION:After vapor-depositing a light absorbing layer 2 composed of a p-type semiconductor made principally of CdTe on a glass substrate 1 provided with a Pt electrode layer, the surface of the layer 2 is etched off. After etching, a CdTe-MgTe solid solution film 3 which has a CdTe:MgTe mol ratio of 1:1 and is composed of Cd0.5Mg0.5Te is formed on the layer 2 by simultaneously vapor-depositing CdTe and Mg. In case the light absorbing layer of the p-type semiconductor is composed of CdTe when a light transmitting window layer is composed of a CdTe-MgTe solid solution, the lattice constant of each layer can be made nearly equal to each other. |
