发明名称 SELF-REFLESHING METHOD FOR SEMICONDUCTOR MEMORY DEVICE AND REFLESH CONTROL CIRCUIT THEREOF
摘要 PURPOSE: To reduce a refreshing regulated time by burst refreshing for a short time before/after self-refreshing. CONSTITUTION: A self-refreshing detecting part 10 receives AN input control signal bar RAS and a bar CAS and after the lapse of a set time, enables a refreshing entry signalϕSRAS and disables it by the release of this. A burst refresh control part 12 detects the trigger point of the signalϕSRAS to output a burst control signalϕBRE. This is made the pulse string CK0 of a period t1 by counter 14, counted and set by a counter 16 and then the control part 12 is stopped to disable the signalϕBRE. A self-refreshing control part 18 receives this and enables a self control signalϕsref, and a counter 20 outputs the pulse string CK1 of a period t2 . A master clock part 22 outputs the enabled one of the pulse strings CK0 and CK1 as a master clockϕself p for selecting a word line.
申请公布号 JPH07211065(A) 申请公布日期 1995.08.11
申请号 JP19940315323 申请日期 1994.12.19
申请人 SAMSUNG ELECTRON CO LTD 发明人 YANAGI SAIKAN;ZEN HARUMORI
分类号 G11C11/403;G11C11/406;(IPC1-7):G11C11/403 主分类号 G11C11/403
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