| 摘要 |
PURPOSE: To eliminate the need for an additional structure means for fixing the magnetization direction in a ferromagnetic layer by forming an low-field MR magnetic sensor based on the GMR effect of a multilayered structure. CONSTITUTION: The multilayered magnetic structure 30 includes two layers 31, 33 consisting of a magnetic material. These layers are separated by a nonmagnetic layer 35. The nonmagnetic material layer 35 is an electrically conductive material or a sufficiently thin insulating material layer which enables the conduction of the conduction electrons between the magnetic material layers by a tunnel effect. The magnetic layers 31, 33 consist of ferromagnetic materials, such as NiFe ('Permalloy (R)'), which are Ni, Fe, Co or their alloy. The layers of the magnetic materials and the nonmagnetic materials are alternately formed by sputtering, etc., and the thicknesses of the individual layers are controlled by a quartz monitor, etc. The length of the magnetic structure 30 is severalμm and is adequately about <=2.0μm. The thicknesses of the magnetic layers 31, 33 are 10 to 100μm and the thickness of the nonmagnetic layer 35 is 10 to 400μm.
|
