| 摘要 |
PURPOSE: To provide a capacitor storage node electrode of a semiconductor device and a capacitor, together with their manufacturing method, wherein the contact resistance between the surface of diffusion layer and a storage node electrode is small with less leakage current. CONSTITUTION: A storage node electrode 35' comprising a silicon substrate 30, a contact part C formed on the surface of the silicon substrate 30, the first conductive film made of a titanium silicide 34 formed on the contact part C, and the second conductive film, of titanium nitride, formed on the first conductive film is provided. A dielectric film 37 comprising tantalum oxide formed on the surface and side surface of storage node electrode 35' and a plate electrode 36' comprising titanium nitride or tungsten formed on the surface and side surface of dielectric film constitute the semiconductor device. |
