发明名称 Plasma incineration of resist on wafer
摘要 Incineration of a resist in a plasma reaction chamber involves establishing a flow of gas contg. non-activated oxygen in the chamber and then introducing a wafer provided with the resist. Also claimed are similar processes which may include a chamber pre-evacuation step or which may employ separate chambers for the gas treatment and incineration operations.
申请公布号 DE19500162(A1) 申请公布日期 1995.08.10
申请号 DE19951000162 申请日期 1995.01.04
申请人 FUJITSU LTD., KAWASAKI, KANAGAWA, JP;FUJITSU VLSI LTD., KASUGAI, AICHI, JP 发明人 MIHARA, SATORU, KAWASAKI, KANAGAWA, JP;KOMADA, DAISUKE, KASUGAI, AICHI, JP
分类号 G03F7/42;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/311 主分类号 G03F7/42
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