| 摘要 |
<p>Prodn. of a bipolar transistor, for protection against electrostatic discharges in an IC, involves masking operations to delimit, for the transistor in a semiconductor substrate, two implantation zones sepd. by a sepn. zone, followed by selectively doping the implantation zones by impurity implantation. In one process, the novelty comprises (a) masking to form field oxide around an active zone including the implantation zones; (b) masking to separate the different implantation zones within the active zone; and (c), after implantation, covering part of the implantation zones and of the sepn. zone with insulation deposited on the semiconductor substrate at the location of the sepn. zone. In a second process, the novelty comprises (a) forming, during the masking operations, a field oxide which does not cover the implantation zones and the sepn. zone; and (b) temporarily masking the sepn. zone during implantation so that only the implantation zones are doped. Also claimed is a bipolar transistor for protection against electrostatic discharges in an IC.</p> |
