| 摘要 |
The thin film gas sensor is manufactured by (A)forming the 4th electric insulating film(8) on a silicon wafer(1) by thermal oxidation, (B)making a heat insulating layer(9) on the 4th electric insulating film(8), (C)forming the 5th electric insulating film(10) on the layer(9), (D)forming a heater pattern(11) on the layer(10), (E)forming the 6th electric insulating film(12) on the pattern(11), (F)forming a contact window of the heater pattern(11) on the film(12), (G)forming a metallic electrode(13) on the film(12) and (H)forming a SnO2 sensor film(14) on the metallic electrode(13). Especially, the thermal insulating layer(9) is composed of mullite(2SiO2-3Al2O3) and the SnO2 sensor film(14) is obtained by spin coating a sol-solution containing alkoxide and alcohol.
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