发明名称 |
MOS/bipolar device |
摘要 |
An integrated device is provided which has a bipolar transistor as an output stage. The bipolar transistor is driven by a short channel metal oxide semiconductor field effect transistor. Such a device has a low on state voltage drop substantially irrespective of the potential supported by the device.
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申请公布号 |
US5440164(A) |
申请公布日期 |
1995.08.08 |
申请号 |
US19940223761 |
申请日期 |
1994.04.06 |
申请人 |
ZETEK PLC |
发明人 |
FINNEY, ADRIAN D.;CASEY, DAVID N. |
分类号 |
H01L27/07;(IPC1-7):H01L27/02;H01L29/78 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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