发明名称 |
Semiconductor device having an SOI structure and a manufacturing method thereof |
摘要 |
A buried oxide film 4 is formed on a main surface of a silicon substrate 1. An SOI layer 5 is formed on buried oxide film 4. Channel stop regions 22a and 22b respectively connected to channel regions of an nMOS 2 and a pMOS 3 are formed in an element isolation region of SOI layer 5. nMOS 2 and pMOS 3 are formed in an element formation region of SOI layer. A concentration of a p type impurity or an n type impurity included in channel stop regions 22a and 22b is higher than a concentration of the p type impurity or the n type impurity included in the channel region of nMOS 2 or the channel region of pMOS 3. An FS gate 16 is formed on channel stop regions 22a and 22b with an FS gate oxide film 15 interposed therebetween. Therefore, a semiconductor device having an SOI structure which is capable of suppressing a parasitic bipolar operation by drawing out efficiently excessive carriers stored in the channel region of transistor can be obtained.
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申请公布号 |
US5440161(A) |
申请公布日期 |
1995.08.08 |
申请号 |
US19940273175 |
申请日期 |
1994.07.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
IWAMATSU, TOSHIAKI;YAMAGUCHI, YASUO;INOUE, YASUO;NISHIMURA, TADASHI |
分类号 |
H01L21/76;H01L21/8238;H01L21/8242;H01L21/84;H01L27/08;H01L27/092;H01L27/108;H01L27/12;H01L29/06;H01L29/40;H01L29/78;H01L29/786;(IPC1-7):H01L27/01;H01L21/265 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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